Mentor: Dr. Andrew Rinzler
College of Physics
"When I first came to the University of Florida, I felt a strong desire to study physics above all other subjects. I became involved in research to see the work that is taking place in the field today and to further explore my own passions."
- Florida Academic Scholars Award (2013)
- UF Dean's List (2013-2015)
- University Scholars Program (2015)
- Barry Goldwater Honorable Mention (2015)
- TMH Rehabilitation Center Volunteer
Hobbies and Interests
Electrostatic Simulation with Charge Trapping Model for Carbon Nanotube-Enabled Vertical Field-Effect Transistors
A new technology that is being investigated and refined for use in consumer electronics is the carbon nanotube-enabled vertical field-effect transistor (CN-VFET), which uses a layer of dilute carbon nanotubes for the source electrode. The device operates by controlling the current flow at the nanotube-semiconductor junction through the manipulation of its Schottky barrier with the field produced by the gate electrode. When the gate voltage is swept over large ranges, however, there is an observable hysteresis of the threshold voltage in the device's current-voltage transfer curves. In organic p-type transistors, such as the CN-VFET, this behavior can be caused by charge trapping that occurs within the gate dielectric. For my project, I will use a Matlab code to simulate the CN-VFET’s electrostatic properties. Specifically, I will incorporate a theoretical model for charge injection into a charge trapping layer within the code in order to reproduce the hysteretic behavior.