Mentor: Dr. Ghatu Subhash
College of Engineering
"Coming from a family of researchers I have always been interested in learning and working with the cutting edge. I believe that research is by far the most important factor in the progression and future success of our society. Discoveries that come from various research projects can have a monumental impact on the world and can improve the way of life of millions."
Mechanical and Aerospace Engineering
- Dynamic Response
- University Scholars Program 2015-2016
- Florida Bright Futures 2013-2016
- Dean's List 2013-2016
Pi Kappa Alpha
- Pike Halftime
- Boys and Girls Club
Hobbies and Interests
3D-Mapping of Phase Distributions beneath Vickers Indentation on Silicon Wafers
Silicon, a semiconductor utilized throughout the electronics, automotive and defense industries, exhibits complex phase transformations when subjected to high pressures. The various silicon phases have slightly different mechanical and electrical properties, which could significantly influence the performance of a component. Within a hydrostatic pressure range of 10-13 GPa, silicon (Si-I) undergoes a phase change to a metallic form (Si-II). This high-pressure metallic phase is unstable during unloading and transforms again to either crystalline phases distinct from Si-I, an amorphous phase, or a combination of both. Critically, the change in crystalline structure of Si is not only a surface phenomenon, though research has generally focused on the phases formed within the indent impression. However, the extent of the phase transformation may extend well beneath the surface of the material, which could have serious consequences for electronic applications. Thus, the region beneath Vickers indentation on single-crystal silicon was investigated to determine the profile of phase transformations with depth and correlate the distribution of phases with mechanical stresses beneath the indentation.